# GaN and SiC inside

Part ID: 4.12a · Layer 4 (Servers, racks & integration) · child of 4.12

Wide-bandgap gallium-nitride and silicon-carbide power devices used inside the power shelf's AC-DC and DC-DC conversion stages for higher efficiency and power density than silicon.

## Companies

| Company | Role | Confidence | Ownership | Ticker | Note |
|---|---|---|---|---|---|
| Infineon | manufacturer | inferred | public | IFX.DE |  |
| Navitas | manufacturer | inferred | public | NVTS |  |
| onsemi | manufacturer | inferred | public | ON |  |
| Wolfspeed | manufacturer | inferred | public | WOLF |  |
| EPC | manufacturer | inferred | private |  |  |

Confidence tags: disclosed = company/filing statement; reported = trade press or partner list; inferred = taxonomy lead.